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1.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxyCHEAH, W. K; FAN, W. J; YOON, S. F et al.Thin solid films. 2007, Vol 515, Num 10, pp 4441-4444, issn 0040-6090, 4 p.Conference Paper

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